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| APT10050B2VFR APT10050LVFR POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. B2VFR 1000V 21A 0.500 T-MAXTM TO-264 LVFR * Identical Specifications: T-MAXTM or TO-264 Package * Faster Switching * Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 D G S * 100% Avalanche Tested All Ratings: TC = 25C unless otherwise specified. APT10050B2VFR_LVFR UNIT Volts Amps 1000 21 84 30 40 520 4.16 -55 to 150 300 21 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 21 0.500 250 1000 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 11-2004 050-5591 Rev C Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10050B2VFR_LVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT pF 6600 595 290 335 29 165 16 13 59 8 7900 830 430 500 45 250 32 26 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Timexxdx Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns 21 84 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) 300 600 1.7 4.8 12 19 C Amps THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.24 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 11.34mH, R = 25, Peak I = 21A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% VR = 200V. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.005 0.01 SINGLE PULSE PDM 11-2004 0.01 Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 050-5591 Rev C Z JC 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT10050B2VFR_LVFR 50 ID, DRAIN CURRENT (AMPERES) 50 VGS=5.5V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 40 40 VGS=5.5V, 10V & 15V 30 5V 30 5V 20 4.5V 10 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 20 4.5V 10 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 50 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 1.3 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 40 1.2 30 1.1 20 TJ = -55C 10 TJ = +125C TJ = +25C 0 VGS=10V VGS=20V 1.0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES) 0.9 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 20 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 0.85 -50 2.5 I = 0.5 I [Cont.] D D VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) V GS = 10V 2.0 1.1 1.0 1.5 0.9 0.8 0.7 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.6 -50 050-5591 Rev C 11-2004 APT10050B2VFR_LVFR 100 ID, DRAIN CURRENT (AMPERES) 10S OPERATION HERE LIMITED BY RDS (ON) 30,000 50 100S 10,000 C, CAPACITANCE (pF) Ciss 10 5 1mS 5,000 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC Coss 1,000 500 Crss .1 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 100 50 TJ =+150C TJ =+25C 16 VDS=100V 12 VDS=200V 8 VDS=500V 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 1 T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source 11-2004 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. 050-5591 Rev C These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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